Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials

Simon Dorfman; David Fuks; Alex Gordon; Peter Wyder

doi:10.1103/PhysRevB.60.R9927

Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials

Simon Dorfman, David Fuks, Alex Gordon, Peter Wyder

Department of Mathematics, Physics and Computer Science (Oranim Campus)

Research output: Contribution to journal › Article › peer-review

Abstract

Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO₃and Pb(Zr, Ti)O₃. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.

Original language	English
Pages (from-to)	R9927-R9930
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.60.R9927
State	Published - 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.60.R9927

Cite this

@article{3e5389d89ea04dc58bfd033bf0858f0c,

title = "Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials",

abstract = "Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO3and Pb(Zr, Ti)O3. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.",

author = "Simon Dorfman and David Fuks and Alex Gordon and Peter Wyder",

year = "1999",

doi = "10.1103/PhysRevB.60.R9927",

language = "English",

volume = "60",

pages = "R9927--R9930",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "14",

}

TY - JOUR

T1 - Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials

AU - Dorfman, Simon

AU - Fuks, David

AU - Gordon, Alex

AU - Wyder, Peter

PY - 1999

Y1 - 1999

N2 - Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO3and Pb(Zr, Ti)O3. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.

AB - Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO3and Pb(Zr, Ti)O3. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.

UR - http://www.scopus.com/inward/record.url?scp=17044420070&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.60.R9927

DO - 10.1103/PhysRevB.60.R9927

M3 - Article

AN - SCOPUS:17044420070

SN - 1098-0121

VL - 60

SP - R9927-R9930

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 14

ER -

Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this