GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals

K. Kim; D. English; S. McKenzie; F. Wu; E. Stark; J. Seymour; P. C. Ku; K. Wise; G. Buzsaki; E. Yoon

doi:10.1109/IEDM.2016.7838486

GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals

K. Kim, D. English, S. McKenzie, F. Wu, E. Stark, J. Seymour, P. C. Ku, K. Wise, G. Buzsaki, E. Yoon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present the micromachined GaN-on-Si μLED optoelectrodes with neuron-sized LEDs monolithically integrated on a thin narrow silicon shank for optical stimulation and electrical recording in a behaving animal. The fabricated μLEDs show an optical power of 1.9 μW at 4 V from a small size of 15 μm × 10 μm with a peak plug efficiency of 0.6 %. This allows high spatial and temporal resolution optogenetic studies from the μLED array in a small pitch of 60 μm along with the integrated recording electrodes in 20-μm pitch. Stimulation artifacts were significantly mitigated by two-metal-layer shielding topology. In vivo validation of the fabricated optoelectrode confirmed the successful light-induced modulation of neuronal activities in hippocampus with square optical pulses of 100-ms duration.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	26.5.1-26.5.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838486
State	Published - 31 Jan 2017
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2016.7838486

Cite this

Kim, K., English, D., McKenzie, S., Wu, F., Stark, E., Seymour, J., Ku, P. C., Wise, K., Buzsaki, G., & Yoon, E. (2017). GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 26.5.1-26.5.4). Article 7838486 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838486

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title = "GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals",

abstract = "We present the micromachined GaN-on-Si μLED optoelectrodes with neuron-sized LEDs monolithically integrated on a thin narrow silicon shank for optical stimulation and electrical recording in a behaving animal. The fabricated μLEDs show an optical power of 1.9 μW at 4 V from a small size of 15 μm × 10 μm with a peak plug efficiency of 0.6 %. This allows high spatial and temporal resolution optogenetic studies from the μLED array in a small pitch of 60 μm along with the integrated recording electrodes in 20-μm pitch. Stimulation artifacts were significantly mitigated by two-metal-layer shielding topology. In vivo validation of the fabricated optoelectrode confirmed the successful light-induced modulation of neuronal activities in hippocampus with square optical pulses of 100-ms duration.",

author = "K. Kim and D. English and S. McKenzie and F. Wu and E. Stark and J. Seymour and Ku, {P. C.} and K. Wise and G. Buzsaki and E. Yoon",

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doi = "10.1109/IEDM.2016.7838486",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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Kim, K, English, D, McKenzie, S, Wu, F, Stark, E, Seymour, J, Ku, PC, Wise, K, Buzsaki, G & Yoon, E 2017, GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838486, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 26.5.1-26.5.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838486

GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals. / Kim, K.; English, D.; McKenzie, S. et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 26.5.1-26.5.4 7838486 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Stark, E.

AU - Seymour, J.

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AB - We present the micromachined GaN-on-Si μLED optoelectrodes with neuron-sized LEDs monolithically integrated on a thin narrow silicon shank for optical stimulation and electrical recording in a behaving animal. The fabricated μLEDs show an optical power of 1.9 μW at 4 V from a small size of 15 μm × 10 μm with a peak plug efficiency of 0.6 %. This allows high spatial and temporal resolution optogenetic studies from the μLED array in a small pitch of 60 μm along with the integrated recording electrodes in 20-μm pitch. Stimulation artifacts were significantly mitigated by two-metal-layer shielding topology. In vivo validation of the fabricated optoelectrode confirmed the successful light-induced modulation of neuronal activities in hippocampus with square optical pulses of 100-ms duration.

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Kim K, English D, McKenzie S, Wu F, Stark E, Seymour J et al. GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 26.5.1-26.5.4. 7838486. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838486

GaN-on-Si μlED optoelectrodes for high-spatiotemporal-accuracy optogenetics in freely behaving animals

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus subject areas

Access to Document

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