Energy Spectrum of InAs/GaSb Heterostructures

Smadar Ben-Tabou De-Leon; B. Laikhtman; L.D.   Shvartsman

doi:10.1016/S0038-1098(97)00290-1

Energy Spectrum of InAs/GaSb Heterostructures

Smadar Ben-Tabou De-Leon, B. Laikhtman, L.D. Shvartsman

Research output: Contribution to journal › Article › peer-review

Abstract

A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAsGaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.

Original language	English
Pages (from-to)	257-262
Number of pages	6
Journal	Solid State Communications
Volume	104
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(97)00290-1
State	Published - 1997
Externally published	Yes

Keywords

A. Quantum wells
D. Electronic band structure

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(97)00290-1

Cite this

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title = "Energy Spectrum of InAs/GaSb Heterostructures",

abstract = "A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAsGaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.",

keywords = "A. Quantum wells, D. Electronic band structure",

author = "{Ben-Tabou De-Leon}, Smadar and B. Laikhtman and L.D. Shvartsman",

year = "1997",

doi = "10.1016/S0038-1098(97)00290-1",

language = "English",

volume = "104",

pages = "257--262 ",

journal = "Solid State Communications",

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T1 - Energy Spectrum of InAs/GaSb Heterostructures

AU - Ben-Tabou De-Leon, Smadar

AU - Laikhtman, B.

AU - Shvartsman, L.D.

PY - 1997

Y1 - 1997

N2 - A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAsGaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.

AB - A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAsGaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.

KW - A. Quantum wells

KW - D. Electronic band structure

UR - http://www.scopus.com/inward/record.url?scp=0031271085&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(97)00290-1

DO - 10.1016/S0038-1098(97)00290-1

M3 - Article

SN - 0038-1098

VL - 104

SP - 257

EP - 262

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Energy Spectrum of InAs/GaSb Heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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