TY - JOUR
T1 - Energy Spectrum of InAs/GaSb Heterostructures
AU - Ben-Tabou De-Leon, Smadar
AU - Laikhtman, B.
AU - Shvartsman, L.D.
PY - 1997
Y1 - 1997
N2 - A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAsGaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.
AB - A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAsGaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.
U2 - https://doi.org/10.1016/S0038-1098(97)00290-1
DO - https://doi.org/10.1016/S0038-1098(97)00290-1
M3 - Article
SN - 0038-1098
VL - 104
SP - 257
EP - 262
JO - Solid State Communications
JF - Solid State Communications
ER -