Double tunneling in polarization switching

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We present a theory of quantum switching of polarization in hydrogen-bonded order-disorder ferroelectrics, and examine the macroscopic quantum-tunneling rate of the polarization reversal for nano-samples induced by microscopic tunneling of protons between the two wells in potentials of hydrogen bonds. We compute the rate of the electric polarization tunneling through the barrier between two minima of the free energy density of a system. By using the instanton approach, we calculate a barrier factor and a prefactor multiplying the exponential of the action integral for the tunneling splitting at zero applied electric field. We compute the tunneling rate of domain walls. We obtain the double tunneling effect, i.e., the polarization tunneling related to the proton tunneling between the two minima in potentials of hydrogen bonds.

Original languageEnglish
Pages (from-to)201-204
Number of pages4
JournalSolid State Communications
Issue number5-6
StatePublished - Aug 2008

Bibliographical note

Funding Information:
The author is grateful to L.A. Bakaleinikov and B.E. Vugmeister for valuable discussions. The Israel Science Foundation (grant No. 495/07) supported this work.


  • A. Hydrogen-bonded ferroelectrics
  • D. Memory effect
  • D. Polarization tunneling
  • D. Proton tunneling

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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